MRFE6S9060NR1【PDF 1/15 页】MOSFET RF N-CH 14W TO270-2

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MRFE6S9060NR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

this device makes it ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD

= 28 Volts,

IDQ

= 450 mA, P

out

= 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain ? 21.1 dB

Drain Efficiency ? 33%

ACPR @ 750 kHz Offset ? -45.7 dBc in 30 kHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

GSM EDGE Application

Typical GSM EDGE Performance: VDD

= 28 Volts, I

= 500 mA,

Pout

= 21 Watts Avg., Full Frequency Band (920-960 MHz)

Power Gain ? 20 dB

Drain Efficiency ? 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM ? 1.5% rms

GSM

Application

Typical GSM Performance: VDD

= 28 Volts, I

= 500 mA, P

out

= 60 Watts,

Full Frequency Band (920-960 MHz)

Power Gain ? 20 dB

Drain Efficiency ? 63%

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters

Integrated ESD Protection

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

- 0.5, +66

Vdc

Gate-Source Voltage

VGS

- 0.5, +12

Vdc

Maximum Operation Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 60 W CW

Case Temperature 78°C,

14 W CW

RθJC

0.77

0.88

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators

by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRFE6S9060N

Rev. 1, 10/2007

Freescale Semiconductor

Technical Data

880 MHz, 14 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFET

CASE 1265-09, STYLE 1

TO-270-2

PLASTIC

MRFE6S9060NR1

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